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U1GWJ49(TE12L Datasheet

U1GWJ49(TE12L Datasheet
Total Pages: 4
Size: 214.26 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: U1GWJ49(TE12L,F)
U1GWJ49(TE12L Datasheet Page 1
U1GWJ49(TE12L Datasheet Page 2
U1GWJ49(TE12L Datasheet Page 3
U1GWJ49(TE12L Datasheet Page 4
U1GWJ49(TE12L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

550mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

500µA @ 40V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-243AA

Supplier Device Package

PW-MINI

Operating Temperature - Junction

-40°C ~ 125°C