TSM1N45DCS RLG Datasheet
TSM1N45DCS RLG Datasheet
Total Pages: 8
Size: 558.55 KB
Taiwan Semiconductor Corporation
This datasheet covers 1 part numbers:
TSM1N45DCS RLG
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Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 500mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.25Ohm @ 250mA, 10V Vgs(th) (Max) @ Id 4.9V @ 250mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V Vgs (Max) ±50V Input Capacitance (Ciss) (Max) @ Vds 185pF @ 25V FET Feature - Power Dissipation (Max) 900mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width) |
