TPCP8003-H(TE85L Datasheet
TPCP8003-H(TE85L Datasheet
Total Pages: 7
Size: 210.63 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPCP8003-H(TE85L,F
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 180mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V FET Feature - Power Dissipation (Max) 840mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PS-8 (2.9x2.4) Package / Case 8-SMD, Flat Lead |
