TPCC8006-H(TE12LQM Datasheet
TPCC8006-H(TE12LQM Datasheet
Total Pages: 7
Size: 177.86 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPCC8006-H(TE12LQM
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 22A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V FET Feature - Power Dissipation (Max) 700mW (Ta), 27W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-TSON Advance (3.3x3.3) Package / Case 8-PowerVDFN |
