TPCA8011-H(TE12LQM Datasheet
TPCA8011-H(TE12LQM Datasheet
Total Pages: 7
Size: 178.15 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPCA8011-H(TE12LQM
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 40A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id 1.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta), 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
