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TPC8221-H Datasheet

TPC8221-H Datasheet
Total Pages: 9
Size: 370.4 KB
Toshiba Semiconductor and Storage
This datasheet covers 1 part numbers: TPC8221-H,LQ(S
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TPC8221-H,LQ(S

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

25mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.3V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 10V

Power - Max

450mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP