TPC8212-H(TE12LQ Datasheet
TPC8212-H(TE12LQ Datasheet
Total Pages: 7
Size: 218.43 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TPC8212-H(TE12LQ,M
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 10V Vgs(th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V Power - Max 450mW Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |
