TK8A10K3 Datasheet
TK8A10K3 Datasheet
Total Pages: 6
Size: 295.15 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
TK8A10K3,S5Q
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 12.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 530pF @ 10V FET Feature - Power Dissipation (Max) 18W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
