TIP112 Datasheet
|
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A Current - Collector Cutoff (Max) 2mA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
