TH58BVG2S3HBAI4 Datasheet
TH58BVG2S3HBAI4 Datasheet
Total Pages: 51
Size: 1,243.01 KB
Toshiba Memory America, Inc.
This datasheet covers 1 part numbers:
TH58BVG2S3HBAI4
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Manufacturer Toshiba Memory America, Inc. Series Benand™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 4Gb (512M x 8) Memory Interface - Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 63-VFBGA Supplier Device Package 63-TFBGA (9x11) |
