SUP85N03-3M6P-GE3 Datasheet
SUP85N03-3M6P-GE3 Datasheet
Total Pages: 6
Size: 95.71 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SUP85N03-3M6P-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.6mOhm @ 22A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3535pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 78.1W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
