SUP85N02-03-E3 Datasheet
SUP85N02-03-E3 Datasheet
Total Pages: 6
Size: 70.79 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SUP85N02-03-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 3mOhm @ 30A, 4.5V Vgs(th) (Max) @ Id 450mV @ 2mA (Min) Gate Charge (Qg) (Max) @ Vgs 200nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 21250pF @ 20V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
