SUP60030E-GE3 Datasheet
SUP60030E-GE3 Datasheet
Total Pages: 8
Size: 147.15 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SUP60030E-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7910pF @ 40V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
