SUD50N10-18P-GE3 Datasheet
SUD50N10-18P-GE3 Datasheet
Total Pages: 8
Size: 119.69 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SUD50N10-18P-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 50V FET Feature - Power Dissipation (Max) 3W (Ta), 136.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
