SUD20N10-66L-GE3 Datasheet
SUD20N10-66L-GE3 Datasheet
Total Pages: 8
Size: 152.51 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SUD20N10-66L-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 66mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 50V FET Feature - Power Dissipation (Max) 2.1W (Ta), 41.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
