STY60NM60 Datasheet
STY60NM60 Datasheet
Total Pages: 8
Size: 293.45 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STY60NM60
|
Manufacturer STMicroelectronics Series MDmesh™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 55mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 266nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3 |
