STW48N60M2-4 Datasheet
STW48N60M2-4 Datasheet
Total Pages: 12
Size: 713.41 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STW48N60M2-4
|
Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 21A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3060pF @ 100V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-4L Package / Case TO-247-4 |
