STW11NB80 Datasheet
STW11NB80 Datasheet
Total Pages: 8
Size: 273.96 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STW11NB80
|
Manufacturer STMicroelectronics Series PowerMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
