STS1HNK60 Datasheet
STS1HNK60 Datasheet
Total Pages: 8
Size: 311.32 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STS1HNK60
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Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 156pF @ 25V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
