STP100N8F6 Datasheet
STP100N8F6 Datasheet
Total Pages: 15
Size: 750.63 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STP100N8F6
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Manufacturer STMicroelectronics Series STripFET™ F6 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5955pF @ 25V FET Feature - Power Dissipation (Max) 176W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
