STN1N20 Datasheet
STN1N20 Datasheet
Total Pages: 12
Size: 510.87 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STN1N20
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Manufacturer STMicroelectronics Series MESH OVERLAY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 206pF @ 25V FET Feature - Power Dissipation (Max) 2.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
