STH270N8F7-2 Datasheet
|
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H²PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab) Variant |
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VII FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 193nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 50V FET Feature - Power Dissipation (Max) 315W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package H²PAK Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
