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STE180NE10 Datasheet

STE180NE10 Datasheet
Total Pages: 12
Size: 260.12 KB
STMicroelectronics
This datasheet covers 1 part numbers: STE180NE10
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STE180NE10

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

795nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

21000pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

ISOTOP