STE110NS20FD Datasheet
STE110NS20FD Datasheet
Total Pages: 12
Size: 258.3 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STE110NS20FD
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Manufacturer STMicroelectronics Series MESH OVERLAY™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 504nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7900pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package ISOTOP® Package / Case ISOTOP |
