STB60NE06L-16T4 Datasheet
STB60NE06L-16T4 Datasheet
Total Pages: 13
Size: 446.35 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STB60NE06L-16T4
|
Manufacturer STMicroelectronics Series STripFET™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 4.5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
