STB50NE10T4 Datasheet
STB50NE10T4 Datasheet
Total Pages: 13
Size: 438.39 KB
STMicroelectronics
Website: https://www.st.com/
This datasheet covers 1 part numbers:
STB50NE10T4
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Manufacturer STMicroelectronics Series STripFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 27mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
