SSM6K204FE Datasheet
SSM6K204FE Datasheet
Total Pages: 6
Size: 192.54 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
SSM6K204FE,LF
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 126mOhm @ 1A, 4V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 195pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package ES6 Package / Case SOT-563, SOT-666 |