SSM6J206FE(TE85L Datasheet
SSM6J206FE(TE85L Datasheet
Total Pages: 5
Size: 226.76 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
SSM6J206FE(TE85L,F
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V Rds On (Max) @ Id, Vgs 130mOhm @ 1A, 4V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 335pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ES6 (1.6x1.6) Package / Case SOT-563, SOT-666 |
