SSM3K7002BS Datasheet
SSM3K7002BS Datasheet
Total Pages: 5
Size: 133.09 KB
Toshiba Semiconductor and Storage
Website: http://www.toshiba.com/taec/
This datasheet covers 1 part numbers:
SSM3K7002BS,LF
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Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 17pF @ 25V FET Feature - Power Dissipation (Max) 200mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package S-Mini Package / Case TO-236-3, SC-59, SOT-23-3 |
