SS9018FBU Datasheet
|
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 54 @ 1mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 97 @ 1mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 1.1GHz Noise Figure (dB Typ @ f) - Gain - Power - Max 400mW DC Current Gain (hFE) (Min) @ Ic, Vce 72 @ 1mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
