SS150TI60110 Datasheet
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Manufacturer IXYS-RF Series - Diode Configuration 3 Independent Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 1.8V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 600V Operating Temperature - Junction -55°C ~ 175°C Mounting Type Surface Mount Package / Case 6-SMD, Flat Lead Exposed Pad Supplier Device Package DE150 |
Manufacturer IXYS-RF Series - Diode Configuration 3 Common Cathode Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 1.8V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 600V Operating Temperature - Junction -55°C ~ 175°C Mounting Type Surface Mount Package / Case 6-SMD, Flat Lead Exposed Pad Supplier Device Package DE150 |
Manufacturer IXYS-RF Series - Diode Configuration 3 Common Anode Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 1.8V @ 5A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 600V Operating Temperature - Junction -55°C ~ 175°C Mounting Type Surface Mount Package / Case 6-SMD, Flat Lead Exposed Pad Supplier Device Package DE150 |
