SQP100P06-9M3L_GE3 Datasheet
SQP100P06-9M3L_GE3 Datasheet
Total Pages: 8
Size: 159.3 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQP100P06-9M3L_GE3
|
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12010pF @ 25V FET Feature - Power Dissipation (Max) 187W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
