SQM200N04-1M8_GE3 Datasheet
SQM200N04-1M8_GE3 Datasheet
Total Pages: 10
Size: 203.69 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQM200N04-1M8_GE3
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Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 17350pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
