SQJ411EP-T1_GE3 Datasheet
SQJ411EP-T1_GE3 Datasheet
Total Pages: 7
Size: 177.09 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQJ411EP-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 5.8mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 6V FET Feature - Power Dissipation (Max) 68W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
