SQJ200EP-T1_GE3 Datasheet
SQJ200EP-T1_GE3 Datasheet
Total Pages: 14
Size: 352.33 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQJ200EP-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 20A, 60A Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 975pF @ 10V Power - Max 27W, 48W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual Asymmetric |
