SQD35N05-26L-GE3 Datasheet
SQD35N05-26L-GE3 Datasheet
Total Pages: 7
Size: 111.37 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQD35N05-26L-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1175pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
