SQ7002K-T1-GE3 Datasheet
SQ7002K-T1-GE3 Datasheet
Total Pages: 7
Size: 100.95 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ7002K-T1-GE3
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 320mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 24pF @ 30V FET Feature - Power Dissipation (Max) 500mW (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
