SQ4917EY-T1_GE3 Datasheet
SQ4917EY-T1_GE3 Datasheet
Total Pages: 10
Size: 247.39 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ4917EY-T1_GE3










Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Rds On (Max) @ Id, Vgs 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1910pF @ 30V Power - Max 5W (Tc) Operating Temperature -55°C ~ 175°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |