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SQ4435EY-T1_GE3 Datasheet

SQ4435EY-T1_GE3 Datasheet
Total Pages: 8
Size: 179.04 KB
Vishay Siliconix
This datasheet covers 1 part numbers: SQ4435EY-T1_GE3
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SQ4435EY-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2170pF @ 15V

FET Feature

-

Power Dissipation (Max)

6.8W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)