SQ3442EV-T1-GE3 Datasheet
SQ3442EV-T1-GE3 Datasheet
Total Pages: 7
Size: 111.8 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ3442EV-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 55mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V FET Feature - Power Dissipation (Max) 1.7W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
