SQ3419AEEV-T1_GE3 Datasheet
SQ3419AEEV-T1_GE3 Datasheet
Total Pages: 11
Size: 268.15 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ3419AEEV-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 61mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 975pF @ 20V FET Feature - Power Dissipation (Max) 5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
