SQ2398ES-T1_GE3 Datasheet
SQ2398ES-T1_GE3 Datasheet
Total Pages: 9
Size: 222.21 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ2398ES-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 300mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 152pF @ 50V FET Feature - Power Dissipation (Max) 2W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
