SQ1912AEEH-T1_GE3 Datasheet
SQ1912AEEH-T1_GE3 Datasheet
Total Pages: 12
Size: 279.59 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ1912AEEH-T1_GE3
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Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 800mA (Tc) Rds On (Max) @ Id, Vgs 280mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 27pF @ 10V Power - Max 1.5W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SC-70-6 Dual Supplier Device Package PowerPAK® SC-70-6 Dual |
