SQ1420EEH-T1-GE3 Datasheet
SQ1420EEH-T1-GE3 Datasheet
Total Pages: 9
Size: 172.93 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SQ1420EEH-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 215pF @ 25V FET Feature - Power Dissipation (Max) 3.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363 |
