SPP18P06PHKSA1 Datasheet
SPP18P06PHKSA1 Datasheet
Total Pages: 9
Size: 456.53 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
SPP18P06PHKSA1
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 130mOhm @ 13.2A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V FET Feature - Power Dissipation (Max) 81.1W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
