SPP15P10PLGHKSA1 Datasheet
SPP15P10PLGHKSA1 Datasheet
Total Pages: 10
Size: 860.47 KB
Infineon Technologies
Website: https://www.infineon.com
This datasheet covers 1 part numbers:
SPP15P10PLGHKSA1
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Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 200mOhm @ 11.3A, 10V Vgs(th) (Max) @ Id 2V @ 1.54mA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V FET Feature - Power Dissipation (Max) 128W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
