SPD100N03S2L04T Datasheet
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 89.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-5 Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 89.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-5 Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD |
