SIZF916DT-T1-GE3 Datasheet
SIZF916DT-T1-GE3 Datasheet
Total Pages: 14
Size: 264.46 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZF916DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V, 4320pF @ 15V Power - Max 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |
