SIZF906ADT-T1-GE3 Datasheet
SIZF906ADT-T1-GE3 Datasheet
Total Pages: 14
Size: 245.71 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZF906ADT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual), Schottky FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V, 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V, 8200pF @ 15V Power - Max 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |
