SIZ926DT-T1-GE3 Datasheet
SIZ926DT-T1-GE3 Datasheet
Total Pages: 14
Size: 247.02 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SIZ926DT-T1-GE3
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Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 40A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V, 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 925pF @ 10V, 2150pF @ 10V Power - Max 20.2W, 40W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PowerPair® (6x5) |
